| PART |
Description |
Maker |
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| KSC2982 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DT |
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSC2500 KSC2500DBU KSC2500DTA KSC2500BBU |
Medium Power Amplifier & Low Saturation
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4781 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| CPH6002 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications
|
Sanyo Semicon Device
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| LMA443 |
31GHz Medium Power Amplifier
31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| 2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
