| PART |
Description |
Maker |
| K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| KM44V1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| PD42S17405 |
16 M-Bit Dynamic RAM(16M 动态RAM) 16 m位动态随机存储器（RAM,600动态）
|
NEC, Corp.
|
| UPD42S17405LA-60 UPD4217405LA-50 |
16M-BIT DYNAMIC RAM
|
NEC
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp.
NEC Corp.
|
| Q67100-Q2079 HM72V160 HYM72V1600GS-50- HYM72V1600G |
From old datasheet system
16M x 72-Bit Dynamic RAM Module
|
SIEMENS[Siemens Semiconductor Group]
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
