| PART |
Description |
Maker |
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| CY24272 |
Rambus XDR Clock Generator
|
Cypress Semiconductor
|
| ICS9214 ICS9214YGLF-T |
Rambus XDR Clock Generator
|
Integrated Circuit Systems
|
| HYB25D512800AT-6 HYB25D512160AT-6 HYB25D512160AT H |
512Mbit Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| MD4331-DXX |
Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk
|
M-Systems
|
| HYB25D512400BF-5 HYB25D512800BF-6 HYB25D512160BE-5 |
512Mbit Double Data Rate SDRAM 512MB的双倍数据速率SDRAM
|
Infineon Technologies A...
Infineon Technologies AG
|
| H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
| K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C |
8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512Mbit SDRAM 12兆内
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W- |
50 V, 25 A, rectifier automotive die
100 V, 25 A, rectifier automotive die
1000 V, 25 A, rectifier automotive die
200 V, 25 A, rectifier automotive die
|
TRANSYS Electronics Limited
|
| SAK-C505CA-4RC SAK-C505CA-LC C505CA-4RC SAA-C505CA |
8-Bit Microcontrollers - High temperature 8-Bit CMOS microcontroller (T=150°C ) with mask-programmable ROM, bare die, with CAN, (20 MHz)
8-bit Single-Chip Microcontroller (Bare Die Delivery)
|
INFINEON[Infineon Technologies AG]
|
| K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
