| PART |
Description |
Maker |
| PLUS16L8-7N PLUS16R8-7N PLUS16R4-7N PLUS16R6-7N PL |
PAL devices OT PLD, 10 ns, PQCC20
|
NXP Semiconductors N.V.
|
| PLC18V8Z PLC18V8Z25A PLC18V8Z25D PLC18V8Z25DB PLC1 |
Zero standby power CMOS versatile PAL devices
|
PHILIPS[Philips Semiconductors]
|
| LA75503V |
VIF/SIF Devices: TV, VCR, PAL 4 systems compatible VIF/SIF signal processor
Adjustment Free VIF/SIF Signal Processing IC for PAL TV/VCR
|
SANYO[Sanyo Semicon Device]
|
| ICX027CKA |
1/2 Inch CCD Image Sensor For PAL Color Camera(1/2 ?卞?CCD?惧?浼??????ㄤ?PAL?跺?褰╄??х??猴?)
From old datasheet system
|
SONY[Sony Corporation]
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
| MSM7661 |
NTSC/PAL Digital Dencoder(NTSC/PAL?跺??板?璇????
|
OKI SEMICONDUCTOR CO., LTD.
|
