| PART |
Description |
Maker |
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36L0T7050 M36L0T7050B0 M36L0T7050T0 M36L0T7050T0Z |
128Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32Mbit (2M x16) PSRAM
From old datasheet system
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| BT136M BT136M-500E BT136M-600E BT136M-800E BT136S- |
Transient Voltage Suppressor Diodes 双向敏感
Octal Registered Transceivers with 3-State Outputs 24-SOIC -40 to 85 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
8-Bit Multi-Level Pipeline Register 24-SOIC -40 to 85 500 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
DIODE: ZENER 5.6V DUAL COMMON ANODE
Triacs sensitive gate
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| NB7L1008M |
Multi-Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| XMEGAA09 |
Interrupts and Programmable Multi-level Interrupt Controller
|
ATMEL Corporation
|
| NB7L72M NB7L72MMNG NB7L72MMNR2G |
Multi−Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| NB6VQ572M NB6VQ572MMNG NB6VQ572MMNR4G |
Multi−Level Inputs w/ Internal Termination
|
ON Semiconductor
|
| M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
