| PART |
Description |
Maker |
| CZTA77 |
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMPTA77 |
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1282 |
Darlington Transistor(± 4A PNP)
Darlington Transistor(【 4A PNP)
Darlington Transistor( 4A PNP)
Darlington Transistor(4A PNP) 达林顿晶体管（【第4A进步党）
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Shindengen Electric Manufacturing Co., Ltd.
|
| ZTX712 |
PNP Darlington Transistor
PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
|
Zetex Semiconductors
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| CXTA64 CXTA14 |
SMD Small Signal Transistor NPN Darlington
SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS
SMD Small Signal Transistor PNP Darlington
|
Central Semiconductor Corp.
|
| BDW74C-S |
PNP DARLINGTON 100V 8A 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns, Inc.
|
| TIP140 TIP141 TIP142 TIP147 TIP146 TIP145 -TIP142 |
10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
PNP Epitaxial Silicon Darlington Transistor
|
http://
STMICROELECTRONICS[STMicroelectronics]
Fairchild Semiconductor
|
| MPSW63-D MPSW63RLRA |
One Watt Darlington Transistors PNP Silicon
Small Signal Darlington PNP
|
ON Semiconductor
|
| 2SC4342M 2SC4342-K-AZ |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁| 3A条一（c）|26
3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
|
NEC, Corp.
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
