| PART |
Description |
Maker |
| HB56U432SB-6N HB56U832B-5NL HB56U832B-7NL |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Altera, Corp.
|
| MT8D432M-60B MT2D132M-60B MT4D232M-60B MT2DT132M-6 |
x32 Burst EDO Page Mode DRAM Module X32号，脉冲EDO页面模式内存模块
|
Micron Technology, Inc.
|
| IBM11E1320B-60 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Etron Technology, Inc
|
| GMM7328100BS-6 GMM7328100BS-8 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Broadcom, Corp.
|
| HB56D51232SB-12A HB56D51232SB-6A |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
| IBM11S4320CP-60T |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
ITT, Corp.
|
| IBM11S1320BLB-70 IBM11S1320BNA-60 IBM11S1320BNA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
| HB56T433D-8B HB56T433D-8BL HB56T433D-6B HB56T433D- |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
|
| AK5328192WP-60 AK5328192WP-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
x32FastPageModeDRAMModule
|
HIROSE ELECTRIC Co., Ltd.
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
