| PART |
Description |
Maker |
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRG4PC30FPBF |
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| GA2.0TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
International Rectifier
|
| IRG4PC30UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
| IRG4PC30SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
| IRG4BC30S-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
| IRG4PC40UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
| GB100DA60UP |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
|
Vishay Siliconix
|
| AIKW50N65DF5 |
High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
|
Infineon Technologies A...
|
| RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
