| PART |
Description |
Maker |
| CPDF12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR9V0LP-HF |
Halogen Free ESD Diodes, V-C=16V, V-ESD=8kV
Low Capacitance ESD SMD Protection Diode
|
Comchip Technology
|
| CPDUR12V CPDUR24V CPDUR5V0 |
ESD Suppressor Diodes, V-C=15V, V-ESD=8kV
ESD Suppressor Diodes, V-C=47V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQR2V5U-HF CPDQR2V5U-HF-15 |
SMD ESD Protection Diode
Halogen Free ESD Diodes, V-C=7V, V-ESD=30kV
|
Comchip Technology
|
| VESD05A1-02V |
Single-line ESD protection diode
ESD Protection Diode in SOD523
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| CPDTR0312V0U-HF |
Halogen Free ESD Array, V-C=24V, V-PV=30kV, V-BD=13.3V
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQT12V0U-HF CPDQT5V0U-HF CPDQT3V3U-HF |
Halogen Free ESD Diodes, V-C=23.7V, V-ESD=8kV
SMD ESD Protection Diode
Halogen Free ESD Diodes, V-C=10.4V, V-ESD=8kV
|
Comchip Technology
|
| ESD8472MUT5G |
Ultra-Low Capacitance RF ESD Protection Micro.Packaged Diodes for ESD Protection
|
ON Semiconductor
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S12FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S8.2FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
