| PART |
Description |
Maker |
| UPD44324182F5-E37-EQ2-A UPD44324362F5-E37-EQ2-A UP |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION 36M条位SRAM2条DDRII字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| R5F2136DMNFD R5F2136AMDXXXFA R5F21367MDFA R5F21367 |
The R8C/36M Group has data flash (1 KB × 4 blocks) with the background operation
|
Renesas Electronics Corporation
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| TC55VDM536AFFN15 TC55VDM536AFFN22 TC55VDM536AFFN16 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| UPD44324085F5-E33-EQ2 UPD44324185F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 36M条位条DDRII SRAM的分离I / O 2字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| NX3L2467 NX3L2467HR NX3L2467GU NX3L2467PW |
Dual low-ohmic double-pole double-throw analog switch
|
NXP Semiconductors
|
| 1300940212 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
