| PART |
Description |
Maker |
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| APTGF90DA60T3AG |
Boost chopper NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| APTGF90A60T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| APTGF150A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| S-AU50M |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
TOSHIBA RF POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
| S-AV33A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
| BSM121AR C67076-S1014-A2 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
