| PART |
Description |
Maker |
| HY62LF16806B-C HY62LF16806B-DFC HY62LF16806B-DFI H |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
GE Security, Inc.
Hynix Semiconductor
|
| HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| HY62UF16101C HY62UF16101CLLF HY62UF16101CLLF-I HY6 |
64Kx16bit full CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HY62UF16201A HY62UF16201A-I |
128Kx16bit full CMOS SRAM
|
HYNIX[Hynix Semiconductor]
|
| HY62SF16406E-SF HY62SF16406E-SFI HY62SF16406E-DF H |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| HY62UF1680 |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
