| PART |
Description |
Maker |
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五(巴西)总裁| 8A条一(c)| TO - 220AB现有
|
Continental Device India Limited Won-Top Electronics Co., Ltd.
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| CSD362 CSD362N CSD362O CSD362R |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE. NPN PLASTIC POWER TRANSISTOR
|
Continental Device India Limited Powerex Power Semiconductors
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| 2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| CSB817OF |
90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| CSD288 CSA614 CSA614Y |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE. PNP/NPN PLASTIC POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
|