| PART |
Description |
Maker |
| MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F400ABG-90I HY29F400ABG-70I HY29F400ABG-50I HY |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 50 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
|
Electronic Theatre Controls, Inc.
Brilliance Semiconductor
BSI
ETC[ETC]
List of Unclassifed Manufacturers
|
