| PART |
Description |
Maker |
| HB52R1289E22 HB52R1289E22-A6B HB52R1289E22-B6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M ??4 Components) PC100 SDRAM
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM 1 GB的注册SDRAM的内 GB的注册SDRAM的内存（364 M组件）PC100的SDRAM内存
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
