| PART |
Description |
Maker |
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
| S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
| WF8M32-100G4DI5 WF8M32-120G4DC5 WF8M32-120G4DM5 WF |
8Mx32 5V FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| S29GL256N10TAIV12 S29GL128N10TAI022 S29GL128N11TAI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
|
| S29GL512P |
Page Mode Flash Memory
|
SPANSION
|
| HMD8M32F4E-5 HMD8M32F4E-6 HMD8M32F4E |
32Mbyte(8Mx32) EDO Mode 4K Ref. 100Pin SMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| AT49BV6416 AT49BV6416-70TI AT49BV6416T-70TI AT49BV |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
ATMEL[ATMEL Corporation]
|
| LH28F128BF |
(LH28FxxxBF) Page Mode Dual Work Flash Memory
|
Sharp
|
| AT49SN6416-70CI AT49SN6416T-70CI AT49SN6416 AT49SN |
64-MEGABIT (4M X 16) BURST/PAGE MODE 1.8-VOLT FLASH MEMORY
|
ATMEL Corporation
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|