| PART |
Description |
Maker |
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http://
ELPIDA MEMORY INC
|
| W3DG64126V-D2 |
1GB - 2x64Mx64, SDRAM UNBUFFERED
|
http://
|
| HB54R1G9F2U-B75B HB54R1G9F2U HB54R1G9F2U-10B HB54R |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYMD512M646BLFS8-D43 HYMD512M646BLFS8-M |
DDR SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| NT6TM64M16CI-G0 NT6TM128M16CI-G0 NT6TN16M16CI-G0 N |
Commercial Mobile DDR 1Gb SDRAM
|
Nanya Technology Corpor...
|
| HYMD512726A8J-J HYMD512726A8J-43 HYMD512726A8J-D4 |
DDR SDRAM - Unbuffered DIMM 1GB
|
Hynix Semiconductor
|
| K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H |
Stacked 1Gb C-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
