| PART |
Description |
Maker |
| HYM71V32D755AT4 |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
|
Jinan Gude Electronic Device Co., Ltd.
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYMD232G726L8-L HYMD232G726L8-K HYMD232G7268 HYMD2 |
Registered DDR SDRAM DIMM
32Mx72|2.5V|K/H/L|x9|DDR SDRAM - Registered DIMM 256MB 32Mx72 | 2.5V的| /升| X9热卖| DDR SDRAM内存-内存256MB的注
|
Hynix Semiconductor
ON Semiconductor
|
| W3EG7234S262D3 W3EG7234S-D3 W3EG7234S265JD3 W3EG72 |
256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7236S-D3 W3EG7236S265D3 W3EG7236S202D3 W3EG723 |
256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| HYMD132G725B8M-H HYMD132G725B8M-K HYMD132G725B8M-L |
DDR SDRAM - Registered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM
SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2
SDRAM Components - 256Mb (16Mx16) PC133 2-2-2
SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2
256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
