| PART |
Description |
Maker |
| IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPD05N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK OptiMOS2 Power-Transistor
|
Infineon Technologies A... Infineon Technologies AG
|
| BSC042N03S |
XTAL CER SMT 7X5 2PAD OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSS306N |
OptiMOS2 Small-Signal-Transistor Avalanche rated Qualified according to AEC Q101
|
TY Semiconductor Co., Ltd
|
| IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|