| PART |
Description |
Maker |
| IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP03N03LBG IPP03N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| BSO052N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 5.2mOhm, 17A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSO300N03S INFINEONTECHNOLOGIESAG-BSO300N03S |
OptiMOS2 Power-Transistor OptiMOS2功率晶体
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 30mOhm, 7.2A, LL
|
INFINEON[Infineon Technologies AG]
|
| BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSF053N03LTG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
