| PART |
Description |
Maker |
| IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW25N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| IHW15N120E1 |
Reverse conducting IGBT with monolithic body Diode for soft-switching
|
Infineon Technologies A...
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IXRH50N120 IXRH50N100 |
1200V IGBT with reverse blocking capability
1000V IGBT with reverse blocking capability
|
IXYS[IXYS Corporation]
|
| IRGMVC50U |
600V COPACK Hi-Rel IGBT in a TO-258AA package
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
|
IRF[International Rectifier]
|
| TISP5070H3BJ TISP5070H3BJR TISP5070H3BJR-S TISP5XX |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
