| PART |
Description |
Maker |
| EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 |
8 Megabyte Sync/Sync Burst, Dual Key DIMM
|
White Electronic Designs Corporation
|
| EUA6210 EUA6210MIR1 |
128K x 36, 3.3V, Sync Burst Pipeline
Output Capacitor-less 67mW Stereo Headphone Amplifier
128K x 32, 3.3V, Sync Burst Pipeline
|
寰蜂俊绉???′唤??????
Eutech Microelectronics Inc
德信科技股份有限公司
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| EDI2AG27265V10D1 |
2x64Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏，10纳秒，同同步突发静态存储器模块x64Kx72.3伏，10纳秒，同同步脉冲静态内存模块）
|
ELNA CO., Ltd.
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| WT9051 |
SYNC SINGAL PROCESSOR TOR MILTI-SYNC DISPLAY
|
Weltrend Semiconductor
ETC[ETC]
|
| EUA6412 |
1M x 8, 3.3V, Sync Burst Pipeline
|
德信科技股份有限公司
|
| GS8322V18GB-166I GS8322V18GB-225 GS8322V18GE-225I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 7.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 6.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| GS8320V18GT-250 GS8320V18GT-250I GS8320V18T-133I G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832036GT-150IV GS832036GT-150V |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
|
