| PART |
Description |
Maker |
| IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| IRFM220A |
N-Channel Power MOSFET(N娌??澧?己?????OS?烘?搴??锛??婧????负200V锛??????讳负0.8惟锛???垫?涓?.13A锛?
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFL024NPBF IRFL024NPBF-15 |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFL4105PBF IRFL4105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
Vishay Siliconix
International Rectifier
|
| IRLM220A IRLM220ATF |
200V N-Channel A-FET
Advanced Power MOSFET
HEXFET Power MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFS9630 IRFS9630 |
Advanced Power MOSFET 4.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRLWI540A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
