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LD1014D - High Performance N-Channel POWERJFET with PN Diode

LD1014D_646502.PDF Datasheet


 Full text search : High Performance N-Channel POWERJFET with PN Diode
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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 Related keyword From Full Text Search System
LD1014D micro LD1014D nec LD1014D corp LD1014D fet LD1014D driver
LD1014D Logic LD1014D Transistors LD1014D integrated circuit LD1014D microchip LD1014D Mosfet
 

 

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