| PART |
Description |
Maker |
| SG12N06DT SG12N06T |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IRGBCX0U IRGPCX0U IRGPF50U |
(IRGxxxx) Discrete IGBTs
|
International Rectifier
|
| AOTS40B65H1 |
IGBT Discrete IGBTs
|
Alpha & Omega Semiconductor
|
| GT40WR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT30J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IXBH15N160 IXBH15N140 |
From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
