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HMD4M32M2VEG-5 - 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V

HMD4M32M2VEG-5_636582.PDF Datasheet
 Full text search : 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V
 Product Description search : 16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V

 Related Part Number
PART Description Maker
KMM5361205C2WG KMM5361205C2W 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
 SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY 1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
 Infineon
SIEMENS[Siemens Semiconductor Group]
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
 Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY 4M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
 Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
 Hitachi,Ltd.
HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY 256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
 Infineon
SIEMENS[Siemens Semiconductor Group]
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V 2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
 广州运达电子科技有限公司
 
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