| PART |
Description |
Maker |
| AP4523GD AP4523GD-14 |
Low Gate Charge, Fast Switching Speed, PDIP-8 Package
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| NTS4001NT1G |
Low Gate Charge for Fast Switching
|
TY Semiconductor Co., Ltd
|
| AP2530AGY-HF AP2530AGY-HF-14 |
Low Gate Charge, Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SMP1340 SMP1340-001 SMP1340-003 SMP1340-004 SMP134 |
Fast Switching Speed, Low Capacitance Plastic Packaged PIN Diodes
Fast Switching Speed Low Capacitance Plastic Packaged PIN Diodes
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| BAW101-7 BAW101-15 |
Fast Switching Speed
DUAL SURFACE MOUNT SWITCHING DIODE
|
Diodes Incorporated
|
