| PART |
Description |
Maker |
| IRFPS35N50LPBF |
34 A, 500 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| SML8075AN-QR-D SML8075HN SML8075HN-JQR SML8075HNR1 |
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA TO-258, 3 PIN
|
TT electronics Semelab, Ltd.
|
| SFF11N80B |
11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET 11 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| MCR100JZHFL MCR100 MCR100JZHFS0.068OHM MCR100JZHFS |
Low Ohmic Thick Film Chip Resistors
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
|
Rohm
|
| IXFH42N50P2 IXFT42N50P2 |
PolarP2 HiperFET Power MOSFET
42 A, 500 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PLASTIC PACKAGE-3
|
IXYS Corporation
IXYS, Corp.
|
| M68731HM 68731HM |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 145-174MHz 6.5W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 145-174MHz / 6.5W / FM PORTABLE RADIO
145 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FQD13N06LTF |
60V N-Channel Logic level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11 A, 60 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| APT802R8AN APT8030CFN |
4.5 A, 800 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
29 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STW10NK80Z |
9 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
|
