| PART |
Description |
Maker |
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PHB55N03LTA PHD55N03LTA PHP55N03LTA |
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State
GE Solid State
|
| MRF6S19100HR308 MRF6S19100HSR3 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor...
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| H01N60 H01N60J H01N60I |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| TO-263 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| TO-220AB TO-220FP TO-263 |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
