| PART |
Description |
Maker |
| AS7C3364PFS32-36BV.1.4 AS7C3364PFS36B-200TQIN AS7C |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 4 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 4 ns, PQFP100
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS820E32AT GS820E32AT-180 GS820E32AT-180I GS820E32 |
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| GVT7164B36 7164B36S |
64K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| GVT7164D36 7164D36S |
64K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| GVT7164D32 7164D32S |
64K X 32 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| GS82032AT-100 GS82032AT-150 GS82032AT-150I GS82032 |
GS820(E)32A
64K x 32 2Mb Synchronous Burst SRAM
|
GSI[GSI Technology]
|
| K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999)
|
Samsung Electronic
|
| GS82032AGT-166I GS82032AGT-180 GS82032AGT-133IT |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 8.5 ns, PQFP100
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 8 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C1298A-100NC GVT7164C18 GVT7164C18Q-5 GVT7164C1 |
Memory : Sync SRAMs
64K x 18 Synchronous Burst RAM Pipelined Output
64K X 18 STANDARD SRAM, 8 ns, PQFP100 PLASTIC, TQFP-100
64K X 18 STANDARD SRAM, 6 ns, PQFP100 PLASTIC, TQFP-100
|
Cypress Semiconductor, Corp.
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
