Part Number Hot Search : 
PIC16C8 27HC641 SIA929DJ B82462G4 LM139PT AN7918F TL074AID KSI0M111
Product Description
Full Text Search

MAPLST1820-090CF - RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V

MAPLST1820-090CF_614255.PDF Datasheet


 Full text search : RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V
 Product Description search : RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
MRF18085B MRF18085BLSR3 MRF18085BR3 RF Power Field Effect Transistors
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS RF Power Field Effect Transistor
Freescale Semiconductor, Inc
MRF21125 MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
MAPLST1820-090CF Iconline MAPLST1820-090CF System MAPLST1820-090CF microchip MAPLST1820-090CF Purpose MAPLST1820-090CF ultra
MAPLST1820-090CF Digital MAPLST1820-090CF connector MAPLST1820-090CF reset MAPLST1820-090CF filter MAPLST1820-090CF Amplifiers
 

 

Price & Availability of MAPLST1820-090CF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.39600110054016