| PART |
Description |
Maker |
| BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system
Asynchronous 4M(512Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| EDI88512LPXCB EDI88512LPXCC EDI88512LPXCI EDI88512 |
512Kx8 Monolithic SRAM, CMOS
|
WEDC[White Electronic Designs Corporation]
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WMS512K8BV-17CCE WMS512K8BV-17CIE WMS512K8BV-17FCE |
SRAM|512KX8|BICMOS-TTL|DIP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|SOJ|32PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 32脚|陶瓷
SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电|计划生育| 36PIN |陶瓷
SRAM|512KX8|BICMOS-TTL|SOJ|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 36PIN |陶瓷
|
Electronic Theatre Controls, Inc.
AMIC Technology, Corp.
|
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
| KM684000A |
512Kx8 bit Low Power CMOS Static RAM(512K x 8浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29F4000 MX29F400TTC-12 MX29F400TTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
