| PART |
Description |
Maker |
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| BC75-12 |
Absorbent Glass mat technology for efficient gas recombinatino
|
B. B. Battery Co., Ltd.
|
| CPD06 |
Chip Form: RECTIFIER CHIP
General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip
|
Central Semiconductor Corp
|
| CPD04 |
Chip Form: RECTIFIER CHIP
General Purpose Rectifier 500 mA Glass Passivated Rectifier Chip
|
Central Semiconductor Corp
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| THM402020SG-10 THM402020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2,097,152 WORDSx40 BIT DYNAMIC RAM MODULE
2/097/152 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SIGC07T60NC Q67050-A4134-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC18T60NC Q67050-A4139-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC25T120CL Q67041-A4704-A003 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC61T60NC Q67050-A4160-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC14T60NC Q67050-A4135-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
