| PART |
Description |
Maker |
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SD214309 2SD1866TV2 |
Medium Power Transistor (Motor, Relay drive) (60隆戮10V, 2A)
Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| L2SA1036KQLT1G L2SA1036KRLT1G |
Medium Power Transistor Epitaxial planar type PNP silicon transistor
|
Leshan Radio Company
|
