| PART |
Description |
Maker |
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| SUD50P04-09L |
P-Channel, Tj = 175 °C power MOSFET;
low leakage current;
P-Channel 40-V (D-S) 175C MOSFET
P-Channel 40-V (D-S), 175C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| SUP57N20-33 |
N-Channel MOSFET
N-Channel 200-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BSP121 |
N-channel enhancement mode vertical D-MOS transistor 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| APT4020BVR |
POWER MOS V 400V 23A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| SUR70N02-04P |
N-Channel 20-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
|
| SUB85N02-03 |
N-channel 20-V (D-S) 175C MOSFET
|
Vishay Intertechnology
|
