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STK4101V - 2-CHANNEL 6W MIN TO 50W MIN AF POWER AMP (DUAL-SUPPLY)

STK4101V_553664.PDF Datasheet

 
Part No. STK4101V STK4111V STK4301V STK4302V STK4311V STK4332V STK4352V STK4362V STK4372V STK4392V STK4191V STK4121V STK4131V STK4141V STK4151V STK4161V STK4171V STK4181V
Description 2-CHANNEL 6W MIN TO 50W MIN AF POWER AMP (DUAL-SUPPLY)

File Size 115.85K  /  1 Page  

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SANYO[Sanyo Semicon Device]
ETC



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 Full text search : 2-CHANNEL 6W MIN TO 50W MIN AF POWER AMP (DUAL-SUPPLY)
 Product Description search : 2-CHANNEL 6W MIN TO 50W MIN AF POWER AMP (DUAL-SUPPLY)


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STK5324 STK5325 STK5327 STK5322 STK4853 STK5321 ST 2-CHANNEL 10 TO 50W MIN AF POWER AMP.(DUAL-SUPPLY)
List of Unclassifed Manufacturers
ETC[ETC]
NTE1317 50 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM18
Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min.
NTE[NTE Electronics]
STK401-340 STK400-010 STK400-020 STK400-030 STK400 AF Power Amplifier (Split Power Supply) (50 W 50 W 50W min, THD = 0.08%)
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
HM628512ALRRI-7 HM628512ALPI-8 HM628512ALRRI-8 HM6 Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
524288-word x 8-bit High Speed CMOS Static RAM 524288字8位高速CMOS静态RAM
Hitachi,Ltd.
CIL21J100KAE CIL21J100KBE CIL21J100KNE CIL21J100MA CIL Series / Ordinary Type
CAP 1000PF 50V 1% NP0(C0G) AXIAL TR-15.7 R-MIL-PRF-20
CAP 27PF 25V 10% X7R SMD-0603 TR-7 5%-MIN-PB
CAP 0.01UF 25V 10% X7R SMD-0603 TR-7 5%-MIN-PB
CAP 330PF 25V 10% X8R SMD-0603 TR-7 5%-MIN-PB
CAP 0.047UF 50V 10% X7R SMD-0603 TR-7 5%-MIN-PB
RES NET ISOLATED 56K OHM 10-SIP
It has ferrite and 100% Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk. 它有铁素体和100%,内部导体银,CIL的系列具有良好的Q特性和消除串扰
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 它有铁素体和100%,内部导体银,CIL的系列具有良好的Q特性和消除串扰
CAP 4700PF 50V 10% X7R SMD-0603 TR-7 5%-MIN-PB 它有铁素体和100%,内部导体银,CIL的系列具有良好的Q特性和消除串扰
SNAP LOCK CABLE MARKER - F 它有铁素体和100%,内部导体银,CIL的系列具有良好的Q特性和消除串扰
CAP 2200PF 100V 10% X7R AXIAL TR-14 它有铁素体和100%,内部导体银,CIL的系列具有良好的Q特性和消除串扰
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
Samsung Electronics
Electronic Theatre Controls, Inc.
15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压20伏特175000脉冲峰值功率)
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压20伏特75000脉冲峰值功率)
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态(电压抑制电压220伏特75000脉冲峰值功率)
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
BCP51115 45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
NXP SEMICONDUCTORS
STK401-020 STK401-140 STK401-010 STK401-340 STK400 2ch AF Power Amplifier (Split Power Supply) 30W 30 W, THD = 0.08%
AF Power Amplifier (Split Power Supply) (50 W 50 W 50W min THD = 0.08%)
3ch AF Power Amplifier (Split Power Supply) (25 W 25 W 25 W THD = 0.4%)
AF Power Amplifier (Split Power Supply) (15 W 15 W min THD = 0.4%)
SANYO[Sanyo Semicon Device]
TO-263-3 (D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
Analog Microelectronics
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MAXIM INTEGRATED PRODUCTS INC
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NTE[NTE Electronics]
 
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