| PART |
Description |
Maker |
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| AGR19180EF |
180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PD60-0012-06S PD60-0003-04S |
1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
1930 MHz - 1990 MHz RF/MICROWAVE COMBINER, 0.27 dB INSERTION LOSS
|
M/A-COM Technology Solutions, Inc.
|
| EMRS-6X8 |
E-Series Surface Mount Mixer 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| MHL19926 |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
|
Motorola
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| MHW1915D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
| PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| 1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
