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MRF6S19100H - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

MRF6S19100H_549056.PDF Datasheet

 
Part No. MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

File Size 420.58K  /  12 Page  

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Freescale Semiconductor, Inc
MOTOROLA



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Part: MRF6S19100H
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Unit price for :
    50: $38.40
  100: $36.48
1000: $34.56

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 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
 Product Description search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs


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