| PART |
Description |
Maker |
| MA28155 |
Radiation Hard Programmable Peripheral Interface
|
Dynex Semiconductor
|
| MA28151 |
RADIATION HARD PROGRAMMABLE COMMUNICATION INTERFACE
|
Dynex Semiconductor
|
| MAC5114LE MAS5114LE MAL5114LE MAR5114LB |
Radiation hard 1024 x 4 bit static RAM
|
Dynex Semiconductor
|
| 54HSC T630 |
Radiation hard 16-Bit ParallelError Detection & Correction
|
Dynex Semiconductor Ltd.
|
| MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|
| MAS17501CB MAS17501CC MAS17501CD MAS17501CL MAS175 |
Radiation hard MIL-STD-1750A execution unit
|
Dynex Semiconductor
|
| AT61162E |
Radiation Hard 2Mbit x 8 SRAM Cube. Made of 16 stacked 128K x 8 SRAMs.
|
Atmel
|
| NOIS1SC1000A-HHC NOIS1SM1000A-HWC NOIS1SM1000A-HHC |
STAR1000 1M Pixel Radiation Hard CMOS
STAR1000 1M Pixel Radiation Hard CMOS
|
ON Semiconductor
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
