| PART |
Description |
Maker |
| A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM
9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
| IDT70V9269L12PRF IDT70V9269L12PRFI IDT70V9279S9PRF |
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
From old datasheet system
Small Signal Diode
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 12 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 高.3 32K的16 SYNCHRONOU S双，端口静态内
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M52L32321A-7.5BG M52L32321A-10BG M52L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52S32321A-7.5BG M52S32321A M52S32321A-10BG M52S32 |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| KM4132G512A |
256K X 32Bit X 2 Banks Synchronous Graphic RAM
|
Samsung semiconductor
|
| IC61C632A-5PQ IC61C632A-6PQI IC61C632A-4TQ IC61C63 |
5ns; 3.3V; 32K x 32 synchronous pipelined static RAM
6ns; 3.3V; 32K x 32 synchronous pipelined static RAM
4ns; 3.3V; 32K x 32 synchronous pipelined static RAM
|
ICSI
|
| HY5V22F-55 HY57V283220T-6 HY57V283220T-55 HY57V283 |
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
| K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF- |
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
|
| GS8150F32 |
16Mb12K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology
|
| K4M28323PH-F K4M28323PH-FC_F K4M28323PH-FE_G K4M28 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Elite Semiconductor Memory Technology, Inc.
Samsung semiconductor
|
