| PART |
Description |
Maker |
| 28F160S3 TE28F160S3-120 GT28F320S3-120 INTELCORP.- |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
WORD-WIDE FlashFile MEMORY FAMILY
|
Intel Corp.
Intel, Corp.
Intel Corporation
|
| TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| 28F008SA 29042908 |
5 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| 28F008S5 28F004S5 28F016S5 29059706 |
5 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system
262214-Word x 8-Bit Field Memory
262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| MSM518221A MSM518221A-25JS MSM518221A-30GS-K MSM51 |
SPECIALTY MEMORY CIRCUIT, PDSO28
262,214-Word x 8-Bit Field Memory
From old datasheet system
|
OKI ELECTRIC INDUSTRY CO LTD
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
