| PART |
Description |
Maker |
| 2SC3240 |
MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
| 2SC2086 |
MITSUBISHI RF POWER TRANSISTOR
|
Mitsubishi Electric Corporation
|
| 2SC908 |
MITSUBISHI RF POWER TRANSISTOR
|
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM20DX-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM150HY-2H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30DY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM300HA-HB |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM300HA-24 |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM300HA-2HB |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM150DY-24BK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|