| PART |
Description |
Maker |
| MRF19090 MRF19090S MRF19090SR3 |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
| EMRS-6X1_1 EMRS-6X1 EMRS-6X1TR EMRS-6X11 |
E-Series Surface Mount Mixer 925-960 MHz, 1805-1880 MHz, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| HYW-5343-X3-716-05 HYW-5343-X3-NNN-05 |
1700 MHz - 1990 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.4 dB INSERTION LOSS-MAX
|
Cypress Semiconductor, Corp.
|
| DB793SD5T-M |
1850 MHz - 1990 MHz ANTENNA-OTHER, 7 dBi GAIN, 105 deg 3dB BEAMWIDTH
|
|
| SPA1900/70/8/0/LH-TNC SPA1900/70/8/0/RH-TNC |
1850 MHz - 1990 MHz ANTENNA SUPPORT CIRCUIT, 7.8 dBi GAIN, 70 deg 3dB BEAMWIDTH
|
Ironwood Electronics
|
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| PCS-09014-2D PCS-09014-2DM |
1710 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 16.4 dBi GAIN, 90 deg 3dB BEAMWIDTH
|
CommScope, Inc.
|
| PCS-XAZ06-0D |
1710 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 20.5 dBi GAIN, 37 deg 3dB BEAMWIDTH
|
ANDREW CORP
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR
100 MHz - 400 MHz RF/MICROWAVE ISOLATOR
400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
