| PART |
Description |
Maker |
| GS74117A |
4Mb Async SRAMs
|
GSI Technology
|
| GS78108A |
8Mb Async SRAMs
|
GSI Technology
|
| CY7C197B-25PC CY7C197B-12VC |
Memory : Async SRAMs 256 Kb (256K x 1) Static RAM
|
Cypress Semiconductor
|
| CFR520 |
Fiber Optic, 5Mb Receiver, TO-18, Plastic Lens
|
Clairex Technologies
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| CY7C1018CV33-12VC CY7C1018CV33-8VC CY7C1018CV33 CY |
128K x 8 static RAM, 8ns Memory : Async SRAMs 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
| GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218 |
9Mb Burst SRAMs 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| IS66WVE1M16ALL-70BLI |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| CS19208CBI |
OC-192/48/12/3 DW/FEC/PM and ASYNC Mapper Device
|
Applied Micro Circuits Corporation
|
| GS71024U-10 GS71024T-15I GS71024U-8 GS71024U-8I GS |
64K x 24 1.5Mb Asynchronous SRAM
|
GSI Technology
|
| GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc. IDT
|