| PART |
Description |
Maker |
| AD8663ACPZ-R2 AD8663ACPZ-RL |
16V, 180A Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers
16V, 180レA Low Power, Low Noise, Single Precision CMOS Rail-to-Rail Output Operational Amplifiers OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| ISL210070712 ISL21007 ISL21007BFB812Z ISL21007BFB8 |
Precision, Low Noise FGA?Voltage References
Precision, Low Noise FGA?⒅oltage References
Precision, Low Noise FGA⑩Voltage References
Precision, Low Noise FGA™ Voltage References; Temperature Range: Full-Range Ind; Package: 8-SOIC T&R 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO8
|
Intersil Corporation
Intersil, Corp.
|
| AD8656ARMZ |
Low Noise, Precision CMOS Amplifier
|
Analog Devices
|
| AD8661ACPZ-R2 AD8661ACPZ-REEL AD8661ACPZ-REEL7 AD8 |
16 V Precision Quad CMOS Rail - to - Rail Operational Amplifier; Package: TSSOP; No of Pins: 14; Temperature Range: Industrial QUAD OP-AMP, 1200 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Noise, Precision 16 V CMOS, Rail-to-Rail Operational Amplifiers
|
Analog Devices, Inc.
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| LT1028A LT1128A LT1028CSW |
Ultralow Noise Precision High Speed Op Amps
Unity Gain Stable Ultra-Low Noise Precision High Speed Op Amp
Ultra Low Noise Precision High Speed Op Amps
|
Linear Technology
|
| LT1127A LT1126A LT1127 LT1126 |
Dual Decompensated Low Noise, High Speed Precision Op Amps(双路，低噪声，无校正高速精密运算放大器)
From old datasheet system
Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps
Dual Decompensated Low Noise, High Speed Precision Operational Amplifier
Quad Decompensated Low Noise, High Speed Precision Operational Amplifier
|
Linear Technology Corporation
|
| TS27M4AC TS27M4AI TS27M4AM TS27M4BC TS27M4BI TS27M |
PRECISION LOW POWER CMOS CMOS OP-AMPS
PRECISION LOW POWER CMOS QUAD OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
