| PART |
Description |
Maker |
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI2064E-100LT100 ISPLSI2064E-135LT100 ISPLSI20 |
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFASTHigh Density PLD
|
Lattice Semiconductor Corporation
|
| ISPLSI2128VL-100LB100 ISPLSI2128VL-100LB208 ISPLSI |
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
Linear Motion Control; Series:LCL; Track Resistance:5kohm; Resistance Tolerance:20%; Power Rating:3W; Operating Temperature Range:-30 C to C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes
Linear Motion Control; Series:LCP8; Track Resistance:10kohm; Resistance Tolerance: /-15%; Power Rating:0.2W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA208
Resistors, Variable sliding; Series:LCP15; Track Resistance:10kohm; Resistance Tolerance: /-10%; Power Rating:0.5W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA208
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP176
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA100
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| LC4128X LC4256ZC-45M132C1 LC4256ZC-75M132C1 LC4032 |
3.3V/2.5V/1.8V在系统可编程超快高密PDLs
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 4.2 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 3.7 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs
|
Lattice Semiconductor Corporation
http://
Lattice Semiconductor, Corp.
|
| ISPLSI5256VA ISPLSI5256VA-70LB208 ISPLSI5256VA-70L |
In-System Programmable 3.3V SuperWIDE?/a> High Density PLD
In-System Programmable 3.3V SuperWIDE??High Density PLD
In-System Programmable 3.3V SuperWIDEHigh Density PLD
|
Lattice Semiconductor Corporation
|
| ISPLSI5512VE-155LF256 ISPLSI5512VE-155LB272 ISPLSI |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
EE PLD, 10 ns, PBGA388
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
|
LATTICE SEMICONDUCTOR CORP
|
