| PART |
Description |
Maker |
| MCM6227A MCM6227AWJ20 MCM6227AWJ20R2 MCM6227AWJ25 |
1M x 1 Bit Static Random Access Memory 100万1位静态随机存取存储器
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 35 ns, PDSO28
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 45 ns, PDSO28
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MCM6227B MCM6227BWJ35R2 MCM6227BWJ35 MCM6227BWJ25R |
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 35 ns, PDSO28
1M x 1 Bit Static Random Access Memory
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
|
| TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| MCM6147A MCM6147A-55 MCM6147A-70 MCM6147AP55 MCM61 |
4K BIT STATIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| MCM6729WJ12R2 MCM6729 MCM6729WJ10 MCM6729WJ10R2 MC |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| UPD2102AL UPD2102AL-2 UPD2102AL-4 |
1024 BIT FULLY DECODED STATIC MOS RANDOM ACCESS MEMORY
|
NEC
|
| AK632512AW AK632512AW-15 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MCM5101 MCM5101C65 MCM5101C80 MCM5101P65 MCM51L01 |
CMOS 1024 BIT STATIC RANDOM ACCESS MEMORY
From old datasheet system
|
Motorola, Inc
|
| AK632512W-15 AK632512Z-20 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
