| PART |
Description |
Maker |
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF080451E PTF080451 |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| MAPL-000817-015C00 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
Tyco Electronics
|
| PTFB241402F |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies AG
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFB241402FV1R250 |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies A...
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
