| PART |
Description |
Maker |
| LD27C513 LD27C513-170V10L LD27C513-250V10L LD27C51 |
PAGE-ADDRESSED 512K (4 X 16K X 8) UV ERASABLE PROM
|
http://
Intel Corp.
INTEL[Intel Corporation]
|
| AN2836 |
Modern motion control applications need more flexibility that can be addressed
|
STMicroelectronics
|
| IS41LV85120B-60K IS41LV85120B-60KL IS41LV85120B |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
| V53C816H V53C816H40 V53C816H45 V53C816H50 V53C816H |
512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| UPD42S16400G5-60-7JD UPD42S16400G5-60-7KD UPD42S16 |
32K x 8 Magnetic Nonvolatile CMOS RAM
8K/16K x 18 Deep Sync FIFOs
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Maxim Integrated Products, Inc.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AT25HP512 |
256/512K-bit, SPI Bus Serial EEPROM, High-speed, Page-write Only, SPI Mode 0 and 3
|
Atmel
|
| 93C86 93C86-EP 93C86-ESN 93C86-IP 93C86-ISN 93C86- |
8K/16K 5.0V Microwire Serial EEPROM
16K 5.0V Microwire Serial EEPROM(4.5~5.5V,16K10M次擦写周具上掉电数据保护电路,EEPROM)
8K/16K 5.0V Microwire Serial EEPROM 8K/16K 5.0V Microwire串行EEPROM
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205 8K/16K 5.0V Microwire串行EEPROM
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| DS21054E 24AA16 24AA16IP 24AA16ISL 24AA16ISN 24AA1 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
16K 1.8V I 2 C O Serial EEPROM 16K.8VI 2二氧化碳串行EEPROM
16K 1.8V I2C SERIAL EEPROM
16K1.8VI2CSERIALEEPROM
16K1.8VI2COSerialEEPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MicrochipTechnology
MICROCHIP[Microchip Technology]
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| CY7C0251AV CY7C036AV CY7C024AV-20AXC CY7C026AV-25A |
3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM 4, 8 or 16K × 16 organization
|
Cypress Semiconductor
http://
|
