| PART |
Description |
Maker |
| HMD8M32F4E-5 HMD8M32F4E-6 HMD8M32F4E |
32Mbyte(8Mx32) EDO Mode 4K Ref. 100Pin SMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD16M64D16EV-5 HMD16M64D16EV-6 |
128Mbyte(16Mx64) EDO Mode 4K/8K Ref. 3.3V, DIMM 168 pin
|
Hanbit Electronics Co.,Ltd
|
| HMD16M36M12EG HMD16M36M12EG-5 HMD16M36M12EG-6 |
64Mbyte (16Mx36) EDO/with Parity Mode 4K Ref. 72pin-SIMM Design
|
Hanbit Electronics Co.,Ltd.
|
| HMD8M36M24EG HMD8M36M24EG-5 HMD8M36M24EG-6 |
32Mbyte(8Mx36) 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD4M36M3EG |
16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V 16MbyteMx362引脚平价模式，上海药物研究所易都4K的参考5V
|
Hanbit Electronics Co., Ltd.
|
| HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M5M467405DTP-5S M5M465165DTP-6S M5M467805DTP-5S M5 |
4M X 16 EDO DRAM, 50 ns, PDSO50
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 江户模式67108864位（16777216 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
| IC41C8512 IC41LV8512 IC41LV8512-60TI IC41C8512-35K |
DYNAMIC RAM, EDO DRAM
512K x 8 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| IS41LV16256B-35KL IS41LV16256B-60T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
|
